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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION *High Collector-Emitter Breakdown VoltageV(BR)CEO= 160V (Min) *Large Current Capacity *Complement to Type 2SA1606 APPLICATIONS *Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww VALUE scs .i UNIT 180 V 160 V 6.0 V 1.5 A 3 A .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ TC=25 Junction Temperature PC 15 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 1mA; IE= 0 IC= 1mA; RBE= IE= 1mA; IC= 0 IC= 500mA; IB= 50mA IC= 10mA; VCE= 5V VCB= 120V; IE= 0 VEB= 4V; IC= 0 MIN 180 160 6 0.3 2SC4159 TYP. MAX UNIT V V V V 1.5 10 10 200 100 23 V A A Switching Times ton tstg tf Turn-on Time Storage Time Fall Time ww w scs .i IC= 300mA; VCE= 5V IC= 50mA; VCE= 10V IE= 0; VCB= 10V; f= 1.0MHz .cn mi e 60 MHz pF 0.15 IC= 0.5A, RL= 40, IB1= -IB2= 50mA, VCC= -20V; PW= 20s 0.81 0.48 s s s hFE Classifications D 60-120 E 100-200 isc Websitewww.iscsemi.cn 2 |
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